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| STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE ST W5NA90 ST H5NA90F I s s V DSS 900 V 900 V R DS(on) < 2.5 < 2.5 ID 5.3 A 3.5 A s s s s TYPICAL RDS(on) = 2.1 30 V GATE-TO-SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 3 2 1 3 2 1 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu e STW 5NA90 V DS VDGR V GS ID ID I DM (*) P t ot Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor V ISO T stg Tj Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junction T emperature o o o Un it ST H5NA90F I 900 900 30 V V V 3.5 2.2 21.2 60 0.48 4000 A A A W W/ C V o o o 5.3 3.4 21.2 150 1.2 -65 to 150 150 C C (*) Pulse width limited by safe operating area January 1998 1/6 STW5NA90-STH5NA90FI THERMAL DATA T O-247 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOW ATT 218 2.08 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) Max Valu e 5.3 520 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A V GS = 0 Min. 900 25 250 100 Typ . Max. Un it V A A nA Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 30 V T c = 100 oC ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 A Min. 2.25 Typ . 3 2.1 5.3 Max. 3.75 2.5 5 Un it V A Static Drain-source On V GS = 10V ID = 2.5 A Resistance V GS = 10V I D = 2.5 A On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V T c = 100 C o DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 2.5 A VGS = 0 Min. 4 Typ . 6.4 1350 150 40 1900 210 60 Max. Un it S pF pF pF 2/6 STW5NA90-STH5NA90FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Cond ition s V DD = 450 V 2.5 A R G = 4.7 V DD = 720 V R G = 47 V DD = 720 V ID = 5 A ID = V GS = 10 V ID = 5 A V GS = 10 V V GS = 10 V 250 A/s Min. Typ . 13 12 Max. 20 19 Un it ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 60 10 26 80 nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 720 V R G = 4.7 I D = 5A V GS = 10 V Min. Typ . 15 7 25 Max. 25 14 40 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5.3 A I SD = 5 A V DD = 30 V VGS = 0 di/dt = 100 A/s T j = 150 o C 1150 17.3 30 Test Cond ition s Min. Typ . Max. 5.3 21.3 1.6 Un it A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/6 STW5NA90-STH5NA90FI TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 4/6 STW5NA90-STH5NA90FI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 5/6 STW5NA90-STH5NA90FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6 |
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